Bc287 silicon pnp audio amplifier transistor in a to39 can by motorola. They are designed for high speed saturated switching and general purpose applications. Semiconductor data sheets andor specifications can and do vary in different. C5929 datasheet vcbo1550v, npn transistor panasonic. A7525 ethel avenue north hollywood, ca 91605 818 9821200 fax 818 765300411specifications are subject to change without notice. Unit vcbo collectorbase voltage open emitter bcy70 50 v bcy71 45 v. Pinning pin description 1 emitter 2 base 3 collector, connected to case. Theyare designed for high speedsaturated switchingand generalpurposeapplication.
They are designed for high speed saturated switching and general purpose applications symbol. But the highest current for the hfe spec is 10a where the minimum hfe is only 5. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification. C5929 datasheet npn silicon transistor panasonic, c5929 pdf, c5929 pinout, c5929 equivalent, c5929 data, c5929 circuit, c5929 output, c5929 schematic. Typical parameters which may be provided in scillc data sheets andor specifications can and do vary in. Characteristics tc 25 csymbolnonetest conditionsminimum typical maximum datasheet search, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits. Npn general purpose amplifier, 2n3393 datasheet, 2n3393 circuit, 2n3393 data sheet.
This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in mos devices. Specification mentioned in this publication are subject to change without notice. Electrical characteristics ta25 deg c unless otherwise specified 2n2221a to 2n2222a description symbol test condition 2221a 2222a unit dc current gain hfe ic0. Mar 10, 2008 a 2n3055 power transistor has a max allowed collector current of 15a.
This publication supersedes and replaces all information previously supplied. Diode 1n9148 1n4307 1n4532 diode 1n3605 2n2222 chip 2n2369 transistor se708 ma1704 ma1703 text. Low power bipolar transistors bc107 bc108 series page 240412 v1. Complementary low voltage transistor stmicroelectronics. Apr 27, 2016 c5929 datasheet npn silicon transistor panasonic, c5929 pdf, c5929 pinout, c5929 equivalent, c5929 data, c5929 circuit, c5929 output, c5929 schematic. Compare pricing for stmicroelectronics 2n2222 across 9 distributors and discover alternative parts, cad models, technical specifications, datasheets, and more on octopart. Our preferred method of payment is via wire transfer of funds. C547c datasheet 45 v, 100 ma npn transistor nxp, bc547c datasheet, c547c pdf, c547c pinout, c547c manual, c547c schematic, c547c equivalent, c547c data. Complementary low voltage transistor features products are preselected in dc current gain application general purpose description these epitaxial planar transistors are mounted in the sot32 plastic package. If ordered before 12pm super fast delivery limited areas. The device is a npn transistor manufactured by using planar technology resulting in rugged high performance devices. Page 2 of 4 electrical characteristics t ambient25.
This data sheet and its contents the information belong to the members of the premier farnell group of companies the group or are licensed to it. Characteristics tamb 25 c unless otherwise specified. Bpage 1 of 32base1emittercollector datasheet search, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes and other semiconductors. The central semiconductor 2n, 2n series types are pnp silicon transistors. Internal schematic diagram october1995 absolute maximum ratings symbol. Bc287 silicon pnp transistor by motorola,download sgs bc287 datasheet. A 2n3055 power transistor has a max allowed collector current of 15a. The max saturation voltage loss of 3v is also specd at 10a when the base current is a whopping 3. Motorola master selection guide data book 1975 motorola inc. Ltd 1 qwr205004,a silicon pnp transistors the utc 2n2955 is a silicon pnp transistor in to3 metal case. Elektronische bauelemente2n2222anpn plastic encapsulated transistor01june2005 rev.
Description the 2n2905a and 2n2907a are silicon planar epitaxial pnp transistors in jedec to39 for 2n2905a and in jedec to18 for 2n2907a metal case. Fairchild, alldatasheet, datasheet, datasheet search site for electronic. Jun 01, 2016 c547c datasheet 45 v, 100 ma npn transistor nxp, bc547c datasheet, c547c pdf, c547c pinout, c547c manual, c547c schematic, c547c equivalent, c547c data. Unit conditions vceosus collectoremitter sustaing voltage 60 v ic200ma, ib0 vcersus collectoremitter sustaing voltage 70 v ic200ma, rbe100. Pnp switching transistor pn2907a limiting values in accordance with the absolute maximum rating system iec 604. Pinning pin description 1 emitter 2 base 3 collector, connected to case fig. Ss9014 npn epitaxial silicon transistor mouser electronics. Silicon planar epitaxial pnp transistor 2n2905acsm low power, high speed saturated switching hermetic surface mounted package. See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Podle zakona o evidenci trzeb je prodavajici povinen vystavit kupujicimu uctenku. Microsemi corporation, a wholly owned subsidiary of microchip technology inc. Description collector emitter voltage collector base voltage emitter base voltage collector current continuous power dissipation 25c derate above 25c power dissipation 25c derate above 25c operating and storage junction temperature range symbol vceo vcbo vebo ic value ma mw mwc w mwc. Zaroven je povinen zaevidovat prijatou trzbu u spravce dane online. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.